TIC106a, TIC106b, TIC106c, TIC106d, TIC106e,TIC106f,TIC106m p-n-p-n silicon reverse-blocking triode thyristors ? silicon controlled rectifiers ? 50v to 600v ? 5 a dc ? 30 a surge current ? max iqt of 200 a device schematic to-z2dab package 1 the anode is in electrical contact with the mounting tab. the date terminal is connected to a "f" region. absolute maximum ratings at 25c case temperature (unless otherwise noted) repetitive peak off-state voltage, vqrm (see note 1 ) repetitive peak reverse voltage, vrrm continuous on-state current at (or below) 80c case temperature (see note 2) average on-state current (1 80 conduction angle) at (or below) 80c case temperature (see note 3) surge on-state current (see note 4) peak positive gate current (pulse duration < 300 ps) peak gate power dissipation (pulse duration < 300 ps) average gate power dissipation (see note 5) operating case temperature range storage temperature range lead temperature 1,6mm (1/1 6 inch) frorn case for 10 seconds TIC106f TIC106a 50v 100v 60v 100v tic108b 200v- 200v tic108c 300v 300v ba 3.2a 30 a 0.2 a 1.3w 0.3 w -40?cto110c -40cto125c 230c notes: 1. these values apply when the gate-cathode resistance rqk ? i kq. 2. these values apply for continuous d-c operation wtth resistive load. above 80cc derate according to figure 3. 3. this value may be applied continuously under single-phase 50-hz half-slne-wave operation with reslatlve load. above 80c derate according to figure 3. 4. this value applies for one 50-hz mf-sine-wave when the device is operating at ior below) rated valutt of ptak reverse voltage and on-3tate current. surge may be repeated after the device has returned to original thermal equilibrium. 5. this value applies for a maximum averaging time of 20 ms. nj semi-conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. information furnished by nj semi-conductors is believed to.be both accurate and reliable at the time of going to press. however, nj semi-conductors assumes no responsibility for any errors or omissions discovered in its use. nj semi-conductors encourages customers to verify that datasheets are current before placing orders. quality semi-conductors
TIC106a, TIC106b, TIC106c, TIC106d, TIC106e,TIC106f,TIC106m p-n-p-n silicon reverse-blocking triode thyristors absolute maximum ratings at 25c case temperature (unless otherwise noted) repetitive peak off-state voltage, vqrm (see note 1 } repetitive peak reverse voltage, vrrm continuous on-state current at (or below) 80c case temperature (see note 2) average on-state current (1 80 conduction angle} et (or below) 80c casa temperature (see note 3} surge on-state current (see note 4} peak positive gate current (pulse duration < 300 us) peak gete power dissipation ipulsa duration < 300 pg) average gate power dissipation (see note 5) operating case temperature range storage temperature range lead temperature 1,6mm (1/1 6 inch) from case for 10 seconds TIC106d TIC106e 400v 500v 400v 600v ba TIC106m 600v 600v 3.2a 30 a 0.2 a 1,3w 0.3w -40cto110c -40 'cto-wc 230c notes: 1. these values apply when the gate-cathode resistance rqk = 1 kfi. 2. these values apply for continuous d-c operation with resistive load. above 6o*c derate according to figure 3. 3. this value may be applied continuously under single-phase 50-hz half-slne-wave operation with resistive load. above 8oc derate according to figure 3. 4. this value applies for one 50-m2 haif-slne-wave when the device is operating at (or below) rated values of peak reverse voltage and on-state current. surge may be repeated after the device has returned to original thermal equilibrium, 5. this value applies for a maximum averaging time of 20 m$. electrical characteristics at 25c case temperature (unless otherwise noted) parameter idhm r<""ititiv<"'mk off-state current irrm rep=*lv?p"k reverse current iqy gate trigger current vgt gate trigger voltage ih holding current vtm peak on-state voltage dv/dt critical rate of rise of off-state voltage test conditions vd - rated vdrm, rgk = i ka, tc ? i ioc vr = rated vrrm, ig = 0, tc = 110c vaa = 6v. rl=1000. tw(0)i?20hs vaa = 6v, rl = 1000. rqk - 1 ka tw(g)>20ms, tc=-40c vaa = e v, rl ? 100q, hqk ? i ko, tw[fl);? 20 us. vaa = ev, hl=ioob, rgk = ika, ?wlfl) * 2fs- tc = - 1 10c vaa = 6v, rqk = i ka, initiatina it = ioma vaa = 6v, rgk = 1 ka, initiating it ~ toma, tc = -40?c itm.5a, see note 6 vd = rated vd, hqk = 1 kq, tc = 110c min typ max 4oo 1 60 200 1.2 0.4 0.6 1 0.2 e e 1.7- 10 unit ca ma ^a v ma v v/ta note 6: these parameters must be measured using pulse techniques, tw = 300 ps, duty cycle < 2 %. voltage-sensing separata from the current-carrying contacts, are located within 3,2 mm (1/8 inch) from the device body. thermal characteristics parameter r0jc rsja min typ max 3.6 62,6 unit ?c/w
TIC106a, TIC106b. TIC106c, TIC106d, TIC106e,TIC106f,TIC106m p-n-p-n silicon reverse-blocking triode thyristors resistive-load switching characteristics at 25c case temperature parameter gate-controlled ql turn-on time circuit-commutated tq tum-off time test conditions vaa = 30 v. rl = s a. rgkiott i = 6 kc. v|na50v, sea figure 1 vaa = 30v. rl = 69, ' irm = 8a, see figure 2 min typ max 1.76 7.7 unit iis ' parameter measurement information voltage waveforms test circuit figure 1 . gate-controlled turn-on time v2 o. vi o. waveforms test circuit figure 2. circuit-commutated turn-off time a. v;n is meaaured with gate and cathode terminals open. b. the input waveform of figure 1 has the following characteristics: tr < 40 ns, tw > 20 ia. c.. waveforms are monitored on an oscilloscope with the following characteristics: tr< 14ns, r|n* 10mb, c(n< 12pf. d. rgkieff ) includes the total resistance of the generator and the external resistor. e. pulse generators for v-) and v2 are synchronized to provide an anode current waveform wrrh the following characteristics: tm = 60 to 300 its, duty cycle = 1 %. the pulse widths of vj and vj are > 10j?. f. resistor ri is adjusted for !rm = 8 a.
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